Samsung has just officially launched the world’s first 32Gb DDR5 DRAM solution based on 12nm process technology, paving the way for the emergence of memory modules with capacities up to 128GB.
On a commercial scale, so far, the world’s leading memory manufacturers such as SK hynix and Micron have only mastered DDR5 DRAM technology up to 24Gb, allowing the creation of memory solutions up to 96GB. Samsung has taken things to the next level with a 32Gb solution based on an advanced 12nm process node. Meanwhile, Micron has also confirmed the successful development of 32Gb DDR5 DRAM but only in theory.
This achievement comes after Samsung began mass production of 12nm type 16Gb DDR5 DRAM in May 2023, and solidifies Samsung’s leadership position in next-generation DRAM technology and high-capacity memory at scale. global tissue.
“ With 32Gb 12nm DRAM, we have successfully created a solution that enables the creation of DRAM modules with capacities up to 1 terabyte (TB). This is an important step forward in the growing demand for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data,” said Mr. SangJoon Hwang, Executive Vice President of Products DRAM Products & Technology at Samsung Electronics said. “We will continue to develop more advanced DRAM solutions through differentiated design and process technologies to push the boundaries of memory technology .”
After successfully developing the first 64 kilobit (Kb) DRAM in 1983, Samsung has now made huge progress in increasing DRAM capacity, increasing 500,000 times in the past 40 years.
Samsung’s latest memory product, developed using advanced processes and technology to increase integration density and optimize design. The result is the highest capacity ever for a DRAM chip, while delivering twice the capacity of 16Gb DDR5 DRAM in the same package size.
Previously, 128GB DDR5 DRAM modules manufactured using 16Gb DRAM required a Through Silicon Via (TSV) process. However, by using Samsung’s 32Gb DRAM, a 128GB module can now be manufactured without using the TSV process, while reducing power consumption by approximately 10% compared to a 128GB module with DRAM 16Gb. This technological breakthrough makes the product the optimal solution for businesses that focus on energy efficiency, such as data centers.
With the foundation of 32Gb DDR5 12nm DRAM, Samsung plans to continue expanding its high-capacity DRAM product line to meet the current and future needs of the computing industry and applications such as AI. This product will also play a key role in Samsung’s ongoing stream of collaborations with other key players in the industry.
Mass production of the new 12nm DDR5 32Gb DRAM is expected to begin later this year.